Paired-pulse facilitation achieved in protonic/electronic hybrid indium gallium zinc oxide synaptic transistors

Performance of Indium Gallium Zinc Oxide Thin-Film Transistors in Saline Solution

Transistors are often envisioned as alternative transducing devices to microelectrodes to communicate with the nervous system. Independently of the selected technology, the transistors should have reliable performance when exposed to physiological conditions (37 C, 5% CO2). Here, we report on the reliable performance of parylene encapsulated indium gallium zinc oxide (IGZO) based thin-film tran...

Passivation of Amorphous Indium-Gallium-Zinc Oxide (IGZO) Thin-Film Transistors

An oxidation-last annealing for enhancing the reliability of indium-gallium-zinc oxide thin-film transistors

Water-soluble thin film transistors and circuits based on amorphous indium-gallium-zinc oxide.

This paper presents device designs, circuit demonstrations, and dissolution kinetics for amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) comprised completely of water-soluble materials, including SiNx, SiOx, molybdenum, and poly(vinyl alcohol) (PVA). Collections of these types of physically transient a-IGZO TFTs and 5-stage ring oscillators (ROs), constructed with them...

Numerical simulation of bias and photo stress on indium-gallium-zinc-oxide thin film transistors

Thin Film Transistors based on amorphous Indium-Gallium-Zinc-Oxide (a-IGZO TFT) are receiving a great deal of attention for their numerous applications as alternatives for amorphous and poly-crystalline Silicon based TFTs. A major concern about a-IGZO TFTs is that they suffer from instabilities when subjected to different types of stress (bias, light, etc...). Stress is believed to create defec...